Transistor Silicon KT605B Analogue 2SC1056 USSR 2 pcs

KT605B Transistors are silicon mesaplanar structures of n-p-n. Designed for use in amplifiers, switching and switching high-frequency devices. KT605B: Structure of the transistor: n-p-n; Рк max - Constant dissipated collector power: 0.4 W; fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 40 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 300 V; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; Iк max - Maximum permissible constant collector current: 100 mA; Iк and max - Maximum permissible collector pulse current: 200 mA; h21e - Static transistor current transfer coefficient for circuits with common emitter: 30 ... 120; Sk - Collector junction capacity: not more than 7 pF; Rke us - Resistance of saturation between the collector and the emitter: no more than 400 Ohm; tk - Time constant of the feedback loop at high frequency: no more than 250 ps